PART |
Description |
Maker |
2SC332507 2SC3325 2SC3325-YTE85LF |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
2SC3665 |
NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
2SC4210 E000916 |
From old datasheet system NPN EPITAXIAL TYPE (AUDIO POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SC342206 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier
|
Toshiba Semiconductor
|
HN1B01F E001967 |
From old datasheet system NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
2SC4207 E000914 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) From old datasheet system
|
Toshiba Semiconductor
|
2SC4118 2SC411807 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
HN1C01FU07 HN1C01FU |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
HN1B04F07 HN1B04F |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications
|
TOSHIBA
|
2SC4944 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier Applications
|
TOSHIBA
|